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1.
High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off
by Wang, Jingshan, Ph.D.  University of Notre Dame. 2018: 111 pages; 13836467.
4.
Growth of gallium nitride layers with very low threading dislocation densities
by Han, Ilsu, Ph.D.  Arizona State University. 2009: 177 pages; 3392126.
6.
Characterization of homoepitaxially-grown aluminum gallium nitride/gallium nitride heterostructures
by Grenko, Judith A., Ph.D.  North Carolina State University. 2009: 305 pages; 3395301.
7.
Development of Deep Ultraviolet (UV-C) Thin-Film Light-Emitting Diodes Grown on SiC
by Saifaddin, Burhan Khalid, Ph.D.  University of California, Santa Barbara. 2018: 174 pages; 10975858.
8.
Aqueous synthesis of zinc oxide films for GaN optoelectronic devices
by Reading, Arthur H., Ph.D.  University of California, Santa Barbara. 2014: 155 pages; 3618808.
9.
Wideband gan microwave power amplifiers with class-g supply modulation
by Wolff, Nikolai, Ph.D.  Technische Universitaet Berlin (Germany). 2018: 11005923.
10.
Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing
by Mahaboob, Isra, Ph.D.  State University of New York at Albany. 2019: 265 pages; 13885888.
13.
III-Nitride Vertical-Cavity Surface-Emitting Lasers
by Leonard, John T., Ph.D.  University of California, Santa Barbara. 2016: 323 pages; 10103599.
15.
Laser microfabrication and testing of silicon carbide diaphragms for MEMS applications
by Pecholt, Benjamin Francis, M.S.  Iowa State University. 2009: 175 pages; 1462175.
19.
Microleakage of self-adhesive sealant following different preparations of pits and fissures
by Al-Amoudi, Ibtyhal, M.S.  Tufts University School of Dental Medicine. 2009: 34 pages; 1469826.
20.
Aluminum gallium nitride/gallium nitride HFET with composite “slow/fast” gate
by Sattu, Ajay Kumar, Ph.D.  University of South Carolina. 2011: 99 pages; 3454813.
21.
Organic-Inorganic Hybrid Materials for Piezoelectric/Triboelectric Nanogenerator
by Chowdhury, Aminur Rashid, M.S.  The University of Texas Rio Grande Valley. 2019: 164 pages; 22583764.
22.
Semiconductor nanowires for nanoelectronics and optoelectronics
by Dong, Yajie, Ph.D.  Harvard University. 2010: 104 pages; 3415413.
23.
Halogen-based plasma etching of novel field-effect transistor gate materials
by Kiehlbaugh, Kasi Michelle, Ph.D.  University of California, Berkeley. 2009: 209 pages; 3402688.
24.
Epitaxial growth, characterization and application of novel wide bandgap oxide semiconductors
by Mares, Jeremy West, Ph.D.  University of Central Florida. 2010: 151 pages; 3415067.
25.
High Frequency GaN Power Converters Digital Twin
by Biglarbegian, Mehrdad, Ph.D.  The University of North Carolina at Charlotte. 2018: 153 pages; 10979304.
27.
The Use of Gallium Nitride as a Scintillator in a Fast Neutron Spectrometer
by Wensman, Johnathan, Ph.D.  Georgetown University. 2019: 170 pages; 13863484.
28.
Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters
by Shah, Krushal S., M.S.  The University of Toledo. 2011: 92 pages; 10835957.
29.
High-performance gateless III-nitride microwave switches
by Wang, Jingbo, Ph.D.  University of South Carolina. 2010: 87 pages; 3402859.
30.
SiC Thin-Films on Insulating substrates for Robust MEMS Applications
by Cheng, Lin, Ph.D.  University of Cincinnati. 2003: 168 pages; 10857159.
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