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1.
High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off
by Wang, Jingshan, Ph.D.  University of Notre Dame. 2018: 111 pages; 13836467.
2.
Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation
by Wolff, Nikolai, Ph.D.  Technische Universitaet Berlin (Germany). 2018: 160 pages; 11005923.
5.
Characterization of homoepitaxially-grown aluminum gallium nitride/gallium nitride heterostructures
by Grenko, Judith A., Ph.D.  North Carolina State University. 2009: 305 pages; 3395301.
6.
Recombination Dynamics in (In,Ga)N/GaN Heterostructures: Influence of Localization and Crystal Polarity
by Feix, Felix Ihbo, Ph.D.  Humboldt Universitaet zu Berlin (Germany). 2018: 187 pages; 27732395.
7.
Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing
by Mahaboob, Isra, Ph.D.  State University of New York at Albany. 2019: 265 pages; 13885888.
9.
Growth of gallium nitride layers with very low threading dislocation densities
by Han, Ilsu, Ph.D.  Arizona State University. 2009: 177 pages; 3392126.
10.
High Frequency GaN Power Converters Digital Twin
by Biglarbegian, Mehrdad, Ph.D.  The University of North Carolina at Charlotte. 2018: 153 pages; 10979304.
11.
Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters
by Shah, Krushal S., M.S.  The University of Toledo. 2011: 92 pages; 10835957.
12.
Aqueous synthesis of zinc oxide films for GaN optoelectronic devices
by Reading, Arthur H., Ph.D.  University of California, Santa Barbara. 2014: 155 pages; 3618808.
13.
The Use of Gallium Nitride as a Scintillator in a Fast Neutron Spectrometer
by Wensman, Johnathan, Ph.D.  Georgetown University. 2019: 170 pages; 13863484.
14.
Digitally Controlled Microwave Power Amplifier Design Techniques for Wireless Communications
by Diddi, Varish, Ph.D.  University of California, San Diego. 2017: 153 pages; 10289301.
16.
Development of Deep Ultraviolet (UV-C) Thin-Film Light-Emitting Diodes Grown on SiC
by Saifaddin, Burhan Khalid, Ph.D.  University of California, Santa Barbara. 2018: 174 pages; 10975858.
17.
Large-Signal Modeling of Gallium Nitride HEMT Devices for Power Amplifiers
by Marcoux, Nick L., M.S.  Tufts University. 2012: 119 pages; 1531394.
19.
First-principles investigations of conductivity control in wide-band-gap semiconductors
by Lyons, John Lambert, Ph.D.  University of California, Santa Barbara. 2012: 161 pages; 3553757.
21.
III-Nitride Vertical-Cavity Surface-Emitting Lasers
by Leonard, John T., Ph.D.  University of California, Santa Barbara. 2016: 323 pages; 10103599.
23.
Semiconductor nanowires for nanoelectronics and optoelectronics
by Dong, Yajie, Ph.D.  Harvard University. 2010: 104 pages; 3415413.
24.
Aluminum gallium nitride/gallium nitride HFET with composite “slow/fast” gate
by Sattu, Ajay Kumar, Ph.D.  University of South Carolina. 2011: 99 pages; 3454813.
25.
Development of Cs-Free Ultraviolet III-Nitride Photocathodes
by Marini, Jonathan, Ph.D.  State University of New York at Albany. 2018: 397 pages; 10744403.
27.
Low Profile, High Power Density and High Efficiency DC-DC Converters
by Liu, Yushi, Ph.D.  University of Colorado at Boulder. 2018: 145 pages; 10980034.
28.
The grammaticalization of ingressive aspect in early English
by Sims, Lynn Diane, Ph.D.  Arizona State University. 2008: 188 pages; 3302972.
30.
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