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III-V and 2D Devices: From MOSFETs to Steep-Slope Transistors
by Si, Mengwei, Ph.D.  Purdue University. 2018: 148 pages; 10838712.
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The Use of Ferroelectrics and Dipeptides as Insulators in Organic Field-Effect Transistor Devices
by Knotts, Grant, Ph.D.  University of Missouri - Columbia. 2017: 153 pages; 10629013.
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Rational Tuning of Quantum Dot Solid Electronic Properties through Ligand Variation
by Fu, Kan, Ph.D.  University of California, Irvine. 2019: 172 pages; 13807798.
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Selected issues facing the use of two-dimensional materials in transistors
by Sun, Leong Wei, Ph.D.  National University of Singapore (Singapore). 2015: 206 pages; 10006037.
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Probe immobilization strategies and device optimization for novel transistor-based DNA sensors
by Fahrenkopf, Nicholas M., Ph.D.  State University of New York at Albany. 2013: 157 pages; 3558154.
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Exploring new dielectrics to improve switching speeds of carbon nanotube memory devices
by Lucas, Kristin Anne, M.S.  Georgetown University. 2011: 83 pages; 1498659.
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Giant-magnetoresistance in hybrid semiconductor/ferromagnetic nanodevices
by Lin, Teng-Yin, Ph.D.  State University of New York at Buffalo. 2010: 144 pages; 3423579.
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Designing Framework for the Computer Aided Design of Silicon Carbide JFET Circuits in BLEO Environments
by Naidugari, Venkata Vinay, M.S.  The University of Mississippi. 2017: 104 pages; 10280107.
17.
Halogen-based plasma etching of novel field-effect transistor gate materials
by Kiehlbaugh, Kasi Michelle, Ph.D.  University of California, Berkeley. 2009: 209 pages; 3402688.
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Magnetic field and electric field effect on magnetostrictive and electrostrictive photonic resonators
by Rubino, Edoardo, Ph.D.  Southern Methodist University. 2016: 108 pages; 10247565.
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Rf linearity in low dimensional nanowire mosfets
by Razavieh, Ali, Ph.D.  Purdue University. 2014: 127 pages; 3636500.
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Novel III-V device architectures for application in advance CMOS logic and beyond
by Hui, Goh Kian, Ph.D.  National University of Singapore (Singapore). 2015: 185 pages; 10006003.
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High-performance gateless III-nitride microwave switches
by Wang, Jingbo, Ph.D.  University of South Carolina. 2010: 87 pages; 3402859.
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A RF Graphene FET Large-Signal Compact Model Compatible with Circuit Simulators
by Trocchia, Scott M., M.S.  The George Washington University. 2012: 101 pages; 1514735.
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A Scalable, High Sensitivity CMOS Electric Field Sensor
by Schaub, R. M., M.S.  State University of New York at Buffalo. 2012: 108 pages; 1520015.
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Design and Evaluation of Circuits and Architectures Based on Beyond-CMOS Device Technologies
by Palit, Indranil, Ph.D.  University of Notre Dame. 2017: 131 pages; 13836459.
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Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing
by Mahaboob, Isra, Ph.D.  State University of New York at Albany. 2019: 265 pages; 13885888.
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