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3.
Characterization of homoepitaxially-grown aluminum gallium nitride/gallium nitride heterostructures
by Grenko, Judith A., Ph.D.  North Carolina State University. 2009: 305 pages; 3395301.
4.
Aluminum gallium nitride/gallium nitride HFET with composite “slow/fast” gate
by Sattu, Ajay Kumar, Ph.D.  University of South Carolina. 2011: 99 pages; 3454813.
5.
The Use of Gallium Nitride as a Scintillator in a Fast Neutron Spectrometer
by Wensman, Johnathan, Ph.D.  Georgetown University. 2019: 170 pages; 13863484.
7.
Magneto-Optical Properties of Rare-Earth Doped Semiconductors
by Helbers, Andrew J., Ph.D.  Lehigh University. 2017: 286 pages; 10623187.
8.
Growth of gallium nitride layers with very low threading dislocation densities
by Han, Ilsu, Ph.D.  Arizona State University. 2009: 177 pages; 3392126.
9.
High Frequency GaN Power Converters Digital Twin
by Biglarbegian, Mehrdad, Ph.D.  The University of North Carolina at Charlotte. 2018: 153 pages; 10979304.
11.
III-Nitride Vertical-Cavity Surface-Emitting Lasers
by Leonard, John T., Ph.D.  University of California, Santa Barbara. 2016: 323 pages; 10103599.
12.
Device Engineering of AlGaN/GaN HEMTs for Applications in Power-Electronic and Sensing
by Mahaboob, Isra, Ph.D.  State University of New York at Albany. 2019: 265 pages; 13885888.
14.
Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters
by Shah, Krushal S., M.S.  The University of Toledo. 2011: 92 pages; 10835957.
15.
Theory, Characterization and Applications of Infrared Hyperbolic Metamaterials
by Fullager, Daniel B., Ph.D.  The University of North Carolina at Charlotte. 2017: 101 pages; 10267303.
16.
Ultra Purification of Gallium by Zone Refining
by Kim, Daniel, Ph.D.  Purdue University. 2018: 107 pages; 10810473.
18.
Large-Signal Modeling of Gallium Nitride HEMT Devices for Power Amplifiers
by Marcoux, Nick L., M.S.  Tufts University. 2012: 119 pages; 1531394.
20.
Aluminum Nitride Countour Mode Resonators
by Melnick, Joshua Robert, M.S.  Rochester Institute of Technology. 2015: 136 pages; 1591270.
21.
Probe immobilization strategies and device optimization for novel transistor-based DNA sensors
by Fahrenkopf, Nicholas M., Ph.D.  State University of New York at Albany. 2013: 157 pages; 3558154.
22.
First-principles investigations of conductivity control in wide-band-gap semiconductors
by Lyons, John Lambert, Ph.D.  University of California, Santa Barbara. 2012: 161 pages; 3553757.
23.
Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer
by Hussain, Babar, Ph.D.  The University of North Carolina at Charlotte. 2017: 154 pages; 10258481.
24.
III-V Bismides as a new Heterojunction Material System for Electronic Devices
by Marks, Zefram Dael, Ph.D.  University of Colorado at Boulder. 2014: 139 pages; 3635873.
25.
26.
Band Structures of Layered Carbon/Boron Nitride Materials With Commensurate Lattices
by Wells, Christopher C., Ph.D.  State University of New York at Albany. 2011: 177 pages; 3450611.
27.
Polarimetric Properties of Optically Resonant Nanostructures
by Theisen, Michael John, Ph.D.  University of Rochester. 2015: 172 pages; 3686567.
28.
Development of Deep Ultraviolet (UV-C) Thin-Film Light-Emitting Diodes Grown on SiC
by Saifaddin, Burhan Khalid, Ph.D.  University of California, Santa Barbara. 2018: 174 pages; 10975858.
29.
High-performance gateless III-nitride microwave switches
by Wang, Jingbo, Ph.D.  University of South Carolina. 2010: 87 pages; 3402859.
30.
Development of Cs-Free Ultraviolet III-Nitride Photocathodes
by Marini, Jonathan, Ph.D.  State University of New York at Albany. 2018: 397 pages; 10744403.
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