Non-volatile memory devices are used to retain data for a longer time without the need of any power supply. A variety of non-volatile memory devices are available in the market depending on their applications and use. As technology is evolving the need for higher and better memory devices is also increasing.
The non-volatile memory device that is of interest in this thesis is the Programmable Metallization Cell or PMC. This device has a few advantages such as good scalability, fast reading-writing speed and good data-retention capability.
We would also look into the features and examples of PMC from its earlier research in comparison with existing memory devices. Moreover, we will develop an analog behavioral model of a single PMC memory cell using Verilog-A Hardware Description Language (HDL) and simulate the same using Hspice tool. This model would help in further research on PMC cell. The DC and Transient performance of the behavioral model will be tested and compared with that of the PMC cell.
|School:||California State University, Long Beach|
|School Location:||United States -- California|
|Source:||MAI 50/03M, Masters Abstracts International|
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