Localized thermoelectric "self cooling" in semiconductor materials is among the most promising approaches for the remediation of on-chip hot spots resulting from the shrinking feature sizes and faster switching speeds of nanoelectronic components. Self cooling in a germanium chip is investigated, using 3-dimensional, thermal-electric, coupled numerical simulations, for a range of systems and geometric parameters. The results suggest that localized cooling, associated with the introduction of an electric current on the back surface of a germanium chip, can effectively reduce the hot spot temperature rise on the active side of the chip. It was found that self cooling in a 100μm thick chip could provide between 3.9°C and 4.5°C hotspot temperature reduction. When using a germanium layer above an electrically insulated silicon layer, self-cooling was found to yield an additional 1°C to 2°C temperature reduction. A streamlined computational tool is developed to facilitate the identification of optimal cooling parameters.
|Commitee:||McCluskey, Patrick, Yang, Bao|
|School:||University of Maryland, College Park|
|School Location:||United States -- Maryland|
|Source:||MAI 50/01M, Masters Abstracts International|
|Keywords:||Electronic cooling, Heat transfer, Hot spots, Self cooling, Thermoelectric|
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