This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in-dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio’s Quad. A broadband linear amplifier with 46dBm OIP3 at 20MHz, 34dBm OIP3 at 1GHz, 6dB noise figure and 10.3dBm P1dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain Control (AGC) circuit is developed. Based on this, a wideband linear-in-dB RF envelope detector is implemented in TowerJazz Semiconductor 0.18 μm SBC BiCMOS process with 2.5GHz bandwidth and 50dB dynamic range.
|Commitee:||Asbeck, Peter, Bitmead, Robert, Buckwalter, James, Kummel, Andrew, Larson, Lawrence|
|School:||University of California, San Diego|
|Department:||Electrical Engineering (Electronic Circuits and Systems)|
|School Location:||United States -- California|
|Source:||DAI-B 71/10, Dissertation Abstracts International|
|Keywords:||Amplifiers, Envelope detectors, Heterojunction bipolar transistors, Silicon germanium|
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