Dissertation/Thesis Abstract

Silicon germanium HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers
by Pan, Hsuan-yu, Ph.D., University of California, San Diego, 2010, 114; 3422364
Abstract (Summary)

This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in-dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio’s Quad. A broadband linear amplifier with 46dBm OIP3 at 20MHz, 34dBm OIP3 at 1GHz, 6dB noise figure and 10.3dBm P1dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain Control (AGC) circuit is developed. Based on this, a wideband linear-in-dB RF envelope detector is implemented in TowerJazz Semiconductor 0.18 μm SBC BiCMOS process with 2.5GHz bandwidth and 50dB dynamic range.

Indexing (document details)
Advisor: Larson, Lawrence
Commitee: Asbeck, Peter, Bitmead, Robert, Buckwalter, James, Kummel, Andrew, Larson, Lawrence
School: University of California, San Diego
Department: Electrical Engineering (Electronic Circuits and Systems)
School Location: United States -- California
Source: DAI-B 71/10, Dissertation Abstracts International
Subjects: Electrical engineering
Keywords: Amplifiers, Envelope detectors, Heterojunction bipolar transistors, Silicon germanium
Publication Number: 3422364
ISBN: 978-1-124-21250-0
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