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Dissertation/Thesis Abstract

Thermal analysis for nanometer-scale integrated circuits
by Hassan, Zyad, M.S., University of Colorado at Boulder, 2009, 98; 1473684
Abstract (Summary)

With increasing power densities and power-induced thermal effects, thermal analysis is becoming increasingly important for reliable, power-efficient integrated circuit (IC) and system design. Computational complexity is the primary challenge of accurate IC thermal analysis. Existing solutions have focused on devising compact modeling methods for chip–package level thermal analysis, with accuracy at the scale of individual on-die functional units. As IC feature sizes approach the nanometer regime, device-level thermal effects, such as the hot phonon ballistic transport, need to be carefully considered for nanometer-scale IC analysis and design. Full-chip IC thermal analysis with accuracy for individual transistors is challenging, requiring accurate characterization of thermal effects spanning several orders of magnitude of spatial modeling granularities ranging from the nanometer-scale to the centimeter-scale and temporal modeling granularities ranging from the nanosecond-scale to the second-scale. This thesis presents Spectra, a multi-scale full-chip steady-state and dynamic IC thermal analysis solution, that is accurate at the scale of individual transistors. Spectra unifies microscopic and macroscopic dynamic thermal physics models, for accurate characterization of heat transport from the transistor-level up to the chip–package level. Spectra is capable of covering the complete spatial and temporal modeling spectrum of IC thermal analysis. The accuracy and efficiency of Spectra are carefully evaluated, and Spectra has been applied to a large industry design. The importance of considering fine-grain temperature information is illustrated with two examples where Spectra is used in estimating leakage power and the negative-bias-temperature-instability (NBTI) effect. Spectra has been implemented and publicly released for free academic and personal use.

Indexing (document details)
Advisor: Shang, Li
Commitee: Somenzi, Fabio, Yang, Ronggui
School: University of Colorado at Boulder
Department: Electrical Engineering
School Location: United States -- Colorado
Source: MAI 48/03M, Masters Abstracts International
Subjects: Electrical engineering
Keywords: Integrated circuit leakage power, Integrated circuit reliability, Integrated circuit thermal factors, Integrated circuit thermal modeling, Model order reduction
Publication Number: 1473684
ISBN: 978-1-109-58078-5
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