The exceptional electronic properties of graphene make it a great tool to probe transport phenomena in layered materials, such as Ruthenium Chloride (RuCl₃). The spin-orbit assisted Mott insulator RuCl₃ presents exciting physics, thanks to spin-orbit entangled moments with interactions that are highly anisotropic. These properties make RuCl₃ the closest experimental realization of the Heisenberg-Kitaev model and of high interest in quantum computing applications. The highly insulating character of RuCl₃ limits the ability to characterize it through electronic transport measurements. Here, we investigate some properties of the strongly correlated material in proximity to graphene through electronic transport measurement on a RuCl₃/graphene heterostructure. We observe an indication of strong Kitaev interactions RuCl₃, in the measurements of resistance as a function of temperature on the heterostructure. In this thesis we also show that graphene can be used as a tool to investigate the effect of topological defects on electronic transport experiments. While these domains walls or stacking boundaries play an important role in electronic transport, their effect is usually hard to isolate or control. Here, we show that it is possible to tune stacking boundaries in a reversible process, by applying strain on a multilayer suspended graphene sample, using a micro electro-mechanical system of actuators. We attribute the observed discreteness of differential conductance and enhancement in quantum Hall effect features to the switching of topological defects, triggered by strain.