Diamond and beta-phase gallium oxide (β-Ga2O3) have been widely studied in recent years as emerging wide bandgap semiconductors. These materials are very promising in a variety of applications in power electronics and UV sensing due to their superior and unique material properties compared to conventional semiconductors. β-Ga2O3 can be easily processed into a free-standing single-crystal nanomembrane (NM) via mechanical exfoliation methods similar to those used for the synthesis of graphene from the bulk graphite. Once the sub-micron β-Ga2O3 NMs are obtained, they can be integrated via a transfer printing process with a wide range of substrates including flexible polymers. In this thesis, a high power flexible β-Ga2O3 NM Schottky barrier diode will be discussed, including the electrical and material characterization. In addition, the application of integrating the β-Ga2O3 NMs with other semiconductor substrates to form heterostructures is discussed, with the integration of free-standing β-Ga2O3 NMs with diamond. As is the case with other wide bandgap semiconductors, both β-Ga2O3 and diamond suffer from the lack of efficient dopants, rendering the fabrication of devices such as diodes and transistors from only one of these materials difficult. However, these materials complement the other to overcome the individual materials’ deficiencies. The demonstration of a β-Ga2O3 NM-diamond heterojunction p-n diode by a novel integration method featuring the use of an ultrathin Al2O3 passivation layer at the interface is discussed, along with the electrical and material characterization. Furthermore, the ability of diamond to be assigned a negative electron affinity by the modification of the surface chemistry is presented, and the fabrication of heterostructures on diamond substrates for multiple electron affinities is addressed. The electrical and material characterization of the diamond/β-Ga2O3 heterostructure is presented and the application of this device towards high power and UV photodetection is demonstrated.
|Commitee:||Jia, Quanxi, Mazumder, Baishakhi|
|School:||State University of New York at Buffalo|
|Department:||Materials Design and Innovation|
|School Location:||United States -- New York|
|Source:||DAI-B 81/12(E), Dissertation Abstracts International|
|Subjects:||Materials science, Electrical engineering|
|Keywords:||Heterogeneous integration, Beta-gallium oxide , Diamond , High power , Ultraviolet , Electronic applications|
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