Dissertation/Thesis Abstract

Elektrooptische Transporteigenschaften und stochastisch aktivierte Prozesse Resonanter Tunneldioden
by Hartmann, Fabian Sebastian, Ph.D., Bayerische Julius-Maximilians-Universitaet Wuerzburg (Germany), 2014, 111; 27766744
Abstract (Summary)

In this thesis, electro-optical transport properties and stochastically-activated processes of resonant tunneling diodes (RTDs) were investigated at room temperature. The RTDs were prepared on the basis of AlGaAs/GaAs heterostructures by molecular beam epitaxy, elec-tron beam lithography and dry chemical etching techniques. In the region of negative dif-ferential conductance (NDC) bistable RTD switching was achieved by exploiting the load line effect in combination with stochastically-activated dynamics of nonlinear systems. The surface dependence of the etching rate was exploited in order to realize RTDs with a stem and two transport branches, which were studied with respect to their optical and electrical properties. In the first section of the experimental part, electrical transport properties of resonant tunneling diodes at room temperature and the area dependence of the coherent and non-coherent electron transport properties are described. The realization of universal logic gates (NAND and NOR) and their reconfigurability by external control parameters is then demonstrated in Section 3.2. The light sensitivity of resonant tunneling diode photo-detectors was studied for the visible wavelength range and for the telecommunication wavelength at λ = 1.3 µm, in Section 3.3, and 3.4, respectively.

Indexing (document details)
Advisor: Worschech , Lukas , Dyakonov , Vladimir
Commitee:
School: Bayerische Julius-Maximilians-Universitaet Wuerzburg (Germany)
School Location: Germany
Source: DAI-C 81/7(E), Dissertation Abstracts International
Source Type: DISSERTATION
Subjects: Chemistry
Keywords: Resonant tunneling diodes
Publication Number: 27766744
ISBN: 9781392545096
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