Dissertation/Thesis Abstract

Epitaxie hochreiner Diamantschichten
by Remfort, Reinhard, Ph.D., Universitaet Duisburg-Essen (Germany), 2019, 184; 27552042
Abstract (Summary)

Because of its unique photoelectric structure the nitrogen vacancy center (NV-center) in diamond is one of the most studied and most promising defects for applications like quantum computers, single photon sources or highly sensitive magnetic sensors. The basis of many of these applications, apart from the strong correlation between the optical and quantum mecha- nical properties of the center, is the extremly long coherence time of the spin triplet state at normal environmental conditions. A limiting factor for this cohrence is the spin-spin interaction between the spin of the negatively char- ged NV-Center and nearby paramagnetic impurities of the diamond lattice. The most common impurity, in both natural and synthetical diamonds, is substitutional nitrogen.

The goal of this work was the conception, construction and optimization of a system for the synthesis of high-purity diamond films and the subsequent synthesis of such films for the investigation of near-surface NV-centers as part of the cooperation project ”Generation and investigation of near-surface spin centers in high-purity diamond”. During the project several near-surface NV ensembles were generated by low energy ion implantation of nitrogen and cha- racterized by optically detected magnetic resonance (ODMR). It was possible to show, that the synthesized diamond films have a very low nitrogen con- tent of less than 5 ppb, which is below the nitrogen content of commercially available diamond substrates.

Indexing (document details)
Advisor: Buck , Volker
Commitee:
School: Universitaet Duisburg-Essen (Germany)
School Location: Germany
Source: DAI-C 81/2(E), Dissertation Abstracts International
Source Type: DISSERTATION
Subjects: Materials science, Physics
Keywords: Epitaxy, High purity diamond films
Publication Number: 27552042
ISBN: 9781392447697
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