The use of Gallium Nitride (GaN) for a fast neutron spectrometer via elastic recoil induced scintillation is discussed. As a direct band gap semiconductor, GaN provides high radiative efficiency and high photon yield per deposited unit of energy, both desirable features for a scintillator. Additionally, when correctly doped, GaN exhibits both increased emission, and decreased self-absorption of emitted photons. This work presents initial experiments and modeling which explore the use of GaN as a novel scintillator material for use in a fast neutron spectrometer. These experiments include exposure to neutron, energetic ion, beta, and photon radiations with supplemental computational work explaining observed instrument performance.
|Advisor:||Currie, John F.|
|Commitee:||Cothran, Christopher, Guardala, Noel, Liu, Amy, Mathur, Veerendra|
|School Location:||United States -- District of Columbia|
|Source:||DAI-B 80/11(E), Dissertation Abstracts International|
|Keywords:||Fast neutron spectroscopy, Gan scintillation, Neutron spectrometry|
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