Dissertation/Thesis Abstract

Smart Writing of Programmable Metallization Cell
by Raval, Rizu, M.S., California State University, Long Beach, 2018, 71; 10786883
Abstract (Summary)

In this project, a controller for performing smart writing on programmable metallization cell (PMC) is designed. The controller performs smart writing in two steps: first, data from the PMC cell is read and compared with input data; second, data is written into the PMC cell. The controller compares input data and in-cell data to determine the voltage across PMC. If input data is different from in-cell data and input data is logic 1, then voltage across PMC is set to +0.8V. Similarly, if input data is different from in-cell data and input data is logic 0, then voltage across PMC is changed to -0.5V. If input data and in-cell data are the same, then voltage across PMC is set to 0V. For reading operation, voltage across PMC is set to 0.1V and PMC current is compared to reference current. Simulation results demonstrate that the controller successfully performs smart writing and reading in every scenario mentioned above. Such features are unique among prevailing memory controllers and reduce the energy consumption of the controller.

Indexing (document details)
Advisor: Wang, Fei
Commitee: Chassiakos, Anastasios, Mozumdar, Mohammad
School: California State University, Long Beach
Department: Electrical Engineering
School Location: United States -- California
Source: MAI 57/06M(E), Masters Abstracts International
Source Type: DISSERTATION
Subjects: Electrical engineering
Keywords:
Publication Number: 10786883
ISBN: 9780438148307
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