In this project, a controller for performing smart writing on programmable metallization cell (PMC) is designed. The controller performs smart writing in two steps: first, data from the PMC cell is read and compared with input data; second, data is written into the PMC cell. The controller compares input data and in-cell data to determine the voltage across PMC. If input data is different from in-cell data and input data is logic 1, then voltage across PMC is set to +0.8V. Similarly, if input data is different from in-cell data and input data is logic 0, then voltage across PMC is changed to -0.5V. If input data and in-cell data are the same, then voltage across PMC is set to 0V. For reading operation, voltage across PMC is set to 0.1V and PMC current is compared to reference current. Simulation results demonstrate that the controller successfully performs smart writing and reading in every scenario mentioned above. Such features are unique among prevailing memory controllers and reduce the energy consumption of the controller.
|Commitee:||Chassiakos, Anastasios, Mozumdar, Mohammad|
|School:||California State University, Long Beach|
|School Location:||United States -- California|
|Source:||MAI 57/06M(E), Masters Abstracts International|
Copyright in each Dissertation and Thesis is retained by the author. All Rights Reserved
dissertation or thesis. The supplemental files are provided "AS IS" without warranty. ProQuest is not responsible for the
content, format or impact on the supplemental file(s) on our system. in some cases, the file type may be unknown or
may be a .exe file. We recommend caution as you open such files.
supplemental files is subject to the ProQuest Terms and Conditions of use.