Probing integrated circuits to obtain signal waveforms at various nodes is one of the aims of the modern failure analysis. Mechanical probing is the most widely employed way for these measurements, but it presents several limits such as difficult access to specific locations inside the device. As a result, contactless measurement techniques have become more and more common. Moreover, because of the increasing number of metallization layers, such measurements are often performed from the backside of the chip. In this work, a new and simple laser-based technique for the detection of the signals from the backside of integrated circuits will be presented: the Electro Optical Frequency Modulation (EOFM). Differently to the conventional systems, a Laser Scanning Microscope (LSM) has been employed in combination with measurement instruments available in every electronics laboratory, such as a lock-in amplifier (used in this work) or a spectrum analyzer. With the aim of understanding the different signal signatures coming from different regions of a single transistor (gate and drain), 1D-Simulations of the laser illumination on elementary structures such as, a reverse pn-junction and a MOS-varactor in inversion, have been performed considering different wavelengths. The experimental analyses were performed on MOS, transistors manufactured in 120-nm-technology by Infineon Technologies AG, considering laser sources with two different wavelengths, 1064 nm and 1300 nm, and a super luminescence emission diode (SLED) source at 1300 nm. Finally, the setup has been successfully tested also on more complex circuits which suggest the suitable future utilization of this technique.
|School:||Technische Universitaet Berlin (Germany)|
|Source:||DAI-C 81/1(E), Dissertation Abstracts International|
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