The focus of this dissertation is to systematically investigate heterogeneously integrated III-V multijunction solar cells on Si substrate. Utilizing a combination of comprehensive solar cell modeling and experimental techniques, we seek to better understand the material properties and correlate them to improve the device performance, with simulation providing a very valuable feedback loop. Key technical design considerations and optimal performance projections are discussed for integrating metamorphic III-V multijunction solar cells on Si substrates for 1-sun and concentrated photovoltaics. Key factors limiting the “GaAs-on-Si” cell performance are identified, and novel approaches focused on minimizing threading dislocation density are discussed. Finally, we discuss a novel epitaxial growth path utilizing high-quality and thin epitaxial Ge layers directly grown on Si substrate to create virtual “Ge-on-Si” substrate for III-V-on-Si multijunction photovoltaics. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology with Si substrate looks very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics. (Abstract shortened by ProQuest.)
|Advisor:||Hudait, Mantu K.|
|School:||Virginia Polytechnic Institute and State University|
|School Location:||United States -- Virginia|
|Source:||DAI-B 78/09(E), Dissertation Abstracts International|
|Subjects:||Electrical engineering, Materials science|
|Keywords:||Ae On Si epitaxy, Hererogenous integration, III-V-on-Si solar cells, Multijunction solar cells, Sobe cell modeling|
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