The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sensor capable of detecting the earth’s magnetic field, with strength’s of ∼50 μT. Preliminary testing of N-well Van Der Pauw structures using strong neodymium magnets showed proof of concept for hall voltage sensing, however, poor geometry of the structures led to a high offset voltage. A 1-axis Hall effect sensor was designed, fabricated and tested with a sensitivity of 1.12x10-3 mV/Gauss using the RIT metal gate PMOS process. Poor geometry and insufficient design produced an offset voltage of 0.1238 volts in the 1-axis design; prevented sensing of the earth’s magnetic field. The new design features improved geometry for sensing application, improved sensitivity and use the RIT sub-CMOS process. The completed 2-axis device showed an average sensitivity to large magnetic fields of 0.0258 μV/Gauss at 10 mA supply current.
|Advisor:||Fuller, Lynn F.|
|Commitee:||Kurinec, Santosh, Pearson, Robert, Puchades, Ivan|
|School:||Rochester Institute of Technology|
|School Location:||United States -- New York|
|Source:||MAI 55/03M(E), Masters Abstracts International|
|Subjects:||Electrical engineering, Electromagnetics, Materials science|
|Keywords:||CMOS processing, Hall effect, MEMS, Magnetic sensing|
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