Dissertation/Thesis Abstract

CMOS Compatible 3-Axis Magnetic Field Sensor using Hall Effect Sensing
by Locke, Joshua R., M.E., Rochester Institute of Technology, 2015, 33; 10003075
Abstract (Summary)

The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sensor capable of detecting the earth’s magnetic field, with strength’s of ∼50 μT. Preliminary testing of N-well Van Der Pauw structures using strong neodymium magnets showed proof of concept for hall voltage sensing, however, poor geometry of the structures led to a high offset voltage. A 1-axis Hall effect sensor was designed, fabricated and tested with a sensitivity of 1.12x10-3 mV/Gauss using the RIT metal gate PMOS process. Poor geometry and insufficient design produced an offset voltage of 0.1238 volts in the 1-axis design; prevented sensing of the earth’s magnetic field. The new design features improved geometry for sensing application, improved sensitivity and use the RIT sub-CMOS process. The completed 2-axis device showed an average sensitivity to large magnetic fields of 0.0258 μV/Gauss at 10 mA supply current.

Indexing (document details)
Advisor: Fuller, Lynn F.
Commitee: Kurinec, Santosh, Pearson, Robert, Puchades, Ivan
School: Rochester Institute of Technology
Department: Microelectronic Engineering
School Location: United States -- New York
Source: MAI 55/03M(E), Masters Abstracts International
Subjects: Electrical engineering, Electromagnetics, Materials science
Keywords: CMOS processing, Hall effect, MEMS, Magnetic sensing
Publication Number: 10003075
ISBN: 978-1-339-42396-8
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