The successful isolation of a single-layer two-dimensional (2D) material (i.e. graphene) in 2004 has led to remarkable scientific discoveries and attracted tremendous research interests arising from its exceptional properties. Within just a few years, intensive research activities have been conducted on layered 2D materials, in particular, apart from graphene, transition metal dichalcogenides, for a variety of applications from electronics to biochemical sensing. Despite the rapid development in 2D materials research, many challenges and opportunities remain unexplored for devices based on such materials. This thesis addresses several emergent issues that impede the use of graphene and molybdenum disulphide (MoS2) for electronic applications: (1) large contact resistance in graphene devices, (2) Fermi level pinning in MoS2 devices, and (3) threshold voltage control in MoS2 transistors. (Abstract shortened by UMI.)
|School:||National University of Singapore (Singapore)|
|Department:||Electrical And Computer Engineering|
|School Location:||Republic of Singapore|
|Source:||DAI-B 77/06(E), Dissertation Abstracts International|
Copyright in each Dissertation and Thesis is retained by the author. All Rights Reserved
The supplemental file or files you are about to download were provided to ProQuest by the author as part of a
dissertation or thesis. The supplemental files are provided "AS IS" without warranty. ProQuest is not responsible for the
content, format or impact on the supplemental file(s) on our system. in some cases, the file type may be unknown or
may be a .exe file. We recommend caution as you open such files.
Copyright of the original materials contained in the supplemental file is retained by the author and your access to the
supplemental files is subject to the ProQuest Terms and Conditions of use.
Depending on the size of the file(s) you are downloading, the system may take some time to download them. Please be