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Dissertation/Thesis Abstract

Numerical simulation of the random nucleation and growth model in thin films
by Wang, George, M.S., California State University, Long Beach, 2015, 84; 1600600
Abstract (Summary)

We are interested in the transition from an amorphous material to a polycrystalline structure. Previous research done by our group introduced a modified Random Nucleation and Growth model to describe this phenomenon. Besides the nucleation rate, its importance in the grain size distribution (GSD) having long been established, we introduced an effective time dependent growth rate, postulated the analytic form, and ascertained its effect on the GSD to match experimental data. Not only would we like to continue to substantiate this form, we wish also to determine how this rate depends on the fundamental parameters of the model. To achieve this, we have developed a numerical simulation in two dimensions, based on the premises of the model, to simulate crystallization in thin films. Not only does the simulation produce data that matches the analytical results of the nucleation rate and volume fraction available for nucleation, it also fits well with the postulated growth rate. This suggests the validity of the introduced effective growth rate and the functionality of the simulation for studying this process.

Indexing (document details)
Advisor: Bill, Andreas
Commitee: Gu, Jiyeong, Jaikumar, Prashanth
School: California State University, Long Beach
Department: Physics and Astronomy
School Location: United States -- California
Source: MAI 55/02M(E), Masters Abstracts International
Subjects: Condensed matter physics
Publication Number: 1600600
ISBN: 978-1-339-09671-1
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