In this paper, the basic operating principles and applications of the Hall effect and the split-drain devices are first presented as an introduction to the magnetic sensitive MOSFET's (MAGFET's). Then, a novel alternative of on-chip magnetic sensing is proposed by using just the regular MOSFET's. In order to verify this idea, detailed theoretical modeling and device simulations are conducted and it has been proved that the proposed device has at least comparable sensitivity to the traditional split-drain devices.
In addition, few application concerns and the corresponding solutions are mentioned to provide a general overview of the future practical implementation.
|Advisor:||Korman, Can E.|
|Commitee:||Ahmadi, Shahrokh, Ivanov, Tony, Korman, Can E., Li, Zhenyu, Zaghloul, Mona|
|School:||The George Washington University|
|School Location:||United States -- District of Columbia|
|Source:||MAI 53/06M(E), Masters Abstracts International|
|Keywords:||Cmos, Hall effect sensor, Mosfet, Sensitivity|
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