Dissertation/Thesis Abstract

Theoretical Study and Simulation of on-chip MOSFET's as Hall Effect Sensors
by Jin, Tingshu, M.S., The George Washington University, 2014, 65; 1564322
Abstract (Summary)

In this paper, the basic operating principles and applications of the Hall effect and the split-drain devices are first presented as an introduction to the magnetic sensitive MOSFET's (MAGFET's). Then, a novel alternative of on-chip magnetic sensing is proposed by using just the regular MOSFET's. In order to verify this idea, detailed theoretical modeling and device simulations are conducted and it has been proved that the proposed device has at least comparable sensitivity to the traditional split-drain devices.

In addition, few application concerns and the corresponding solutions are mentioned to provide a general overview of the future practical implementation.

Indexing (document details)
Advisor: Korman, Can E.
Commitee: Ahmadi, Shahrokh, Ivanov, Tony, Korman, Can E., Li, Zhenyu, Zaghloul, Mona
School: The George Washington University
Department: Electrical Engineering
School Location: United States -- District of Columbia
Source: MAI 53/06M(E), Masters Abstracts International
Subjects: Electrical engineering
Keywords: Cmos, Hall effect sensor, Mosfet, Sensitivity
Publication Number: 1564322
ISBN: 978-1-321-16336-0
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