This thesis focuses on energy considerations in the MOSFET when we supply a bias to it. We also notice that the length of the MOSFET gets smaller and smaller then for a small release or exchange of energy that may take place in a MOS transistor which can cause a change in the temperature. We have investigated that there is a change in the temperature of the MOSFET when we supply bias to it as we keep reducing the length of the channel. The change in the temperature of the MOSFET is calculated theoretically.
|Advisor:||Jindal, Renuka Prasad|
|Commitee:||Cherif, Aissi, Jindal, Renuka Prasad, Mohammad, Madani, Zhongqi, Pan|
|School:||University of Louisiana at Lafayette|
|School Location:||United States -- Louisiana|
|Source:||MAI 52/06M(E), Masters Abstracts International|
|Subjects:||Electrical engineering, Nanotechnology|
|Keywords:||Change, Energy, Rise, Substrate, Temperature|
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