Dissertation/Thesis Abstract

Substrate Heating During Channel Formation in Nano Scale MOSFET
by Athmakur, Abhiram Goud, M.S., University of Louisiana at Lafayette, 2013, 66; 1553872
Abstract (Summary)

This thesis focuses on energy considerations in the MOSFET when we supply a bias to it. We also notice that the length of the MOSFET gets smaller and smaller then for a small release or exchange of energy that may take place in a MOS transistor which can cause a change in the temperature. We have investigated that there is a change in the temperature of the MOSFET when we supply bias to it as we keep reducing the length of the channel. The change in the temperature of the MOSFET is calculated theoretically.

Indexing (document details)
Advisor: Jindal, Renuka Prasad
Commitee: Cherif, Aissi, Jindal, Renuka Prasad, Mohammad, Madani, Zhongqi, Pan
School: University of Louisiana at Lafayette
Department: Electrical Engineering
School Location: United States -- Louisiana
Source: MAI 52/06M(E), Masters Abstracts International
Source Type: DISSERTATION
Subjects: Electrical engineering, Nanotechnology
Keywords: Change, Energy, Rise, Substrate, Temperature
Publication Number: 1553872
ISBN: 978-1-303-82085-4
Copyright © 2019 ProQuest LLC. All rights reserved. Terms and Conditions Privacy Policy Cookie Policy
ProQuest