Dissertation/Thesis Abstract

Energy of Formation of Step Junctions at Nano Dimensions
by Kawatkar, Prasanna Ulhas, M.S., University of Louisiana at Lafayette, 2013, 70; 1553878
Abstract (Summary)

Planar transistors have been the important building block of integrated circuits for decades, during which the size of transistors has steadily decreased. We will evaluate energy released due to recombination and also evaluate energy stored in the electric field for the step junction case, and then calculate the net energy of formation for the step junction. Also, we have calculated the change in temperature due to the energy of formation.

Indexing (document details)
Advisor: Jindal, Renuka P.
Commitee: Aissi, Cherif, Madani, Mohammad, Pan, Zhongqi
School: University of Louisiana at Lafayette
Department: Electrical Engineering
School Location: United States -- Louisiana
Source: MAI 52/06M(E), Masters Abstracts International
Subjects: Electrical engineering, Nanotechnology, Energy
Keywords: Energy, FinFET, Nano-scale, Semiconductor, Temperature, pn junction
Publication Number: 1553878
ISBN: 978-1-303-82159-2
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