Planar transistors have been the important building block of integrated circuits for decades, during which the size of transistors has steadily decreased. We will evaluate energy released due to recombination and also evaluate energy stored in the electric field for the step junction case, and then calculate the net energy of formation for the step junction. Also, we have calculated the change in temperature due to the energy of formation.
|Advisor:||Jindal, Renuka P.|
|Commitee:||Aissi, Cherif, Madani, Mohammad, Pan, Zhongqi|
|School:||University of Louisiana at Lafayette|
|School Location:||United States -- Louisiana|
|Source:||MAI 52/06M(E), Masters Abstracts International|
|Subjects:||Electrical engineering, Nanotechnology, Energy|
|Keywords:||Energy, FinFET, Nano-scale, Semiconductor, Temperature, pn junction|
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