Resistive random access memory (ReRAM) is a potential replacement technology for Flash and other memory implementations. Advantages of ReRAM include increased scalability, low power operation, and compatibility with silicon semiconductor manufacturing. Most of the ReRAM devices described to date have utilized thin film based metal oxide dielectrics as a resistive switching matrix. The goal of this dissertation project has been to investigate the resistive switching behavior of nanoparticulate metal oxides and to develop methods to utilize these materials in ReRAM device fabrication. To this end, nanoparticles of TiO2 and HfO2 were synthesized under a variety of conditions resulting in various size, shape, and crystallinity. Electrical measurements of individual nanoparticles, as well as composite films of nanoparticles, were performed with limited success. To improve the stability of nanoparticle films, a spin on glass, hydrogen silsesquioxane (HSQ), was incorporated into the film stack. Addition of HSQ prevented electrical shorting and stabilized the nanoparticle films. In addition to serving as a stabilizer for nanoparticle films, HSQ was also found to have its own resistive switching properties. Composite films consisting of HSQ and nanoparticles yielded modified switching behavior which was tunable based upon nanoparticle composition and the thickness of the nanoparticle film. Our results demonstrate that both VSET and VRESET of HSQ switching can be increased when nanoparticles are incorporated with HSQ, without any significant changes to the device's high and low resistance states. We conclude that metal oxide nanoparticles can function as the dielectric material for ReRAM and can also be used to modulate the switching properties of composite ReRAM devices.
|Advisor:||Cady, Nathaniel C.|
|Commitee:||Bergkvist, Magnus, Cortez, Rebecca, Dunn, Kathleen A., Hartley, John|
|School:||State University of New York at Albany|
|Department:||Nanoscale Science and Engineering-Nanoscale Engineering|
|School Location:||United States -- New York|
|Source:||DAI-B 74/11(E), Dissertation Abstracts International|
|Subjects:||Inorganic chemistry, Engineering, Materials science|
|Keywords:||Hafnium oxide, Hydrogen silsesquioxane, Nanoparticles, Resistive memory, Silicon oxide, Titanium oxide|
Copyright in each Dissertation and Thesis is retained by the author. All Rights Reserved
The supplemental file or files you are about to download were provided to ProQuest by the author as part of a
dissertation or thesis. The supplemental files are provided "AS IS" without warranty. ProQuest is not responsible for the
content, format or impact on the supplemental file(s) on our system. in some cases, the file type may be unknown or
may be a .exe file. We recommend caution as you open such files.
Copyright of the original materials contained in the supplemental file is retained by the author and your access to the
supplemental files is subject to the ProQuest Terms and Conditions of use.
Depending on the size of the file(s) you are downloading, the system may take some time to download them. Please be