Dissertation/Thesis Abstract

Reset noise suppression in CMOS image sensor using charge control technique
by Syamsundar, Nitya, M.S., The University of Texas at San Antonio, 2012, 79; 1531653
Abstract (Summary)

In a photodiode based CMOS image sensor, reset noise plays a significant role in limiting the detection of the sensor, especially in low light conditions. In a standard active pixel sensor (APS) the reset noise (i.e. the hard reset noise) is of the order of [special characters omitted] where k is the Boltzmann constant, T is the temperature, and C is the photodiode capacitance of the CMOS image sensor.

Several methods for reducing the reset noise have been published in the past. In this thesis, a new circuit of the CMOS image sensor with significant reduction in the reset noise using the charge control mechanism is presented. In this technique (charge control mechanism), the reset noise is reduced by precisely determining when to stop charging the capacitive sensor. The voltage across the photodiode is monitored by employing a column level comparator which is part of a feedback circuit connected to the reset transistor.

The simulation results obtained from a 4 transistor per pixel 0.5┬Ám CMOS technology show that the reset noise can be reduced to less than [special characters omitted]. This noise reduction is achieved with high fill factor and without adding any image lag.

Indexing (document details)
Advisor: Joo, Youngjoong
Commitee: John, Eugene, Liu, Bao
School: The University of Texas at San Antonio
Department: Electrical & Computer Engineering
School Location: United States -- Texas
Source: MAI 51/04M(E), Masters Abstracts International
Source Type: DISSERTATION
Subjects: Electrical engineering
Keywords: Image sensor, Reset noise, Signal to noise ratio
Publication Number: 1531653
ISBN: 9781267843463
Copyright © 2019 ProQuest LLC. All rights reserved. Terms and Conditions Privacy Policy Cookie Policy
ProQuest