Dissertation/Thesis Abstract

Large-Signal Modeling of Gallium Nitride HEMT Devices for Power Amplifiers
by Marcoux, Nick L., M.S., Tufts University, 2012, 119; 1531394
Abstract (Summary)

The purpose of this thesis is to show that GaN can be used to construct superior radio frequency (RF) transistors for mobile handset power amplifiers (PAs) and similar applications in the 1-2 watt S-band regime. In order to advance research in this operating regime, it is essential to have a quick turnaround (device fabrication, model extraction, circuit design). This thesis will describe a low complexity equivalent circuit large-signal modeling technique to evaluate and design small, medium power GaN high electron mobility transistor (HEMT) based PA circuits; demonstrate both the devices and the described model by the design, fabrication, and testing of both a class AB and class E PA; and identify the properties of GaN that result in portions of the model which increase performance (linearity, efficiency, and spectral masking) compared to other device types.

Indexing (document details)
Advisor: Sonkusale, Sameer
Commitee: Afsar, Mohammed, Lachapelle, John
School: Tufts University
Department: Electrical Engineering
School Location: United States -- Massachusetts
Source: MAI 51/04M(E), Masters Abstracts International
Subjects: Electrical engineering
Keywords: Gallium nitride, Nonlinear model, Power amplifiers
Publication Number: 1531394
ISBN: 978-1-267-83594-9
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