A scalable, high sensitivity Complimentary Metal-Oxide Semiconductor (CMOS) electrical field sensor is presented. The sensor features a relatively small form factor compared to competing technologies, a wide dynamic range, and a sensitivity of 27.74nA per kV/m. The sensor was designed for and fabricated on a 2064μm by 2442μm silicon wafer using ON Semiconductor's 0.5μm Mixed-Mode technology available through the MOSIS fabrication service. This sensor would be useful in a variety of applications in fields such as biomedical engineering, materials science, power transmission monitoring, electric motor monitoring, non-destructive testing, and more.
|Advisor:||Titus, Albert H.|
|Commitee:||Bird, Jonathan, Zirnheld, Jennifer|
|School:||State University of New York at Buffalo|
|School Location:||United States -- New York|
|Source:||MAI 51/03M(E), Masters Abstracts International|
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