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A scalable, high sensitivity Complimentary Metal-Oxide Semiconductor (CMOS) electrical field sensor is presented. The sensor features a relatively small form factor compared to competing technologies, a wide dynamic range, and a sensitivity of 27.74nA per kV/m. The sensor was designed for and fabricated on a 2064μm by 2442μm silicon wafer using ON Semiconductor's 0.5μm Mixed-Mode technology available through the MOSIS fabrication service. This sensor would be useful in a variety of applications in fields such as biomedical engineering, materials science, power transmission monitoring, electric motor monitoring, non-destructive testing, and more.
| Advisor: | Titus, Albert H. |
| Commitee: | Bird, Jonathan, Zirnheld, Jennifer |
| School: | State University of New York at Buffalo |
| Department: | Electrical Engineering |
| School Location: | United States -- New York |
| Source: | MAI 51/03M(E), Masters Abstracts International |
| Source Type: | DISSERTATION |
| Subjects: | Electrical engineering |
| Keywords: | |
| Publication Number: | 1520015 |
| ISBN: | 978-1-267-67263-6 |
