Dissertation/Thesis Abstract

A Scalable, High Sensitivity CMOS Electric Field Sensor
by Schaub, R. M., M.S., State University of New York at Buffalo, 2012, 108; 1520015
Abstract (Summary)

A scalable, high sensitivity Complimentary Metal-Oxide Semiconductor (CMOS) electrical field sensor is presented. The sensor features a relatively small form factor compared to competing technologies, a wide dynamic range, and a sensitivity of 27.74nA per kV/m. The sensor was designed for and fabricated on a 2064μm by 2442μm silicon wafer using ON Semiconductor's 0.5μm Mixed-Mode technology available through the MOSIS fabrication service. This sensor would be useful in a variety of applications in fields such as biomedical engineering, materials science, power transmission monitoring, electric motor monitoring, non-destructive testing, and more.

Indexing (document details)
Advisor: Titus, Albert H.
Commitee: Bird, Jonathan, Zirnheld, Jennifer
School: State University of New York at Buffalo
Department: Electrical Engineering
School Location: United States -- New York
Source: MAI 51/03M(E), Masters Abstracts International
Source Type: DISSERTATION
Subjects: Electrical engineering
Keywords:
Publication Number: 1520015
ISBN: 978-1-267-67263-6
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