Plasma processing technology is indispensable for manufacturing the very large scale integrated circuits (ICs) used by the electronics industry. 48 Generally, the precise control and characterization of the plasma processing medium becomes pivotal to develop a successful product. At present, a variety of complementary characterization techniques are providing precise and detailed information on a variety of processing plasmas. However, newer generations of plasma processing techniques are becoming far too complex and their operating conditions impose great limitations on the operability and functionality of many important diagnostics. To adapt to these new set of constraints, the present work focuses on the development of a new Electron Beam Exciter device designed to conduct quantitative optical measurements in processing systems. This newly developed Exciter prototype employs a highly controllable electron beam of controlled energy level (Ee = 1/2 mv2) and density (n e) to cause light emission from electron-impact excitation events with gas particles that are part of the chemical makeup characterizing the processing environment. As such, the current design utilizes an inductively coupled plasma (ICP) source (RF coil antenna, 29 MHz) to generate a continuous cloud of electrons that can be extracted to an excitation region where optical and electrical measurements are collected. This variable plasma source, or electron bottle, is made out of a quartz or sapphire tube and is positioned opposite to an electron extraction assembly (or accelerator assembly), so that plasma electrons are extracted from the source via controlled dc electric potentials. The electron extraction assembly is composed of three distinct electrodes, namely the nozzle extractor, an extractor plate and a Faraday cup electrode, and is protected by a Tin doped Indium Oxide (ITO) interface that allows device operability in harsh halide enriched environments. Furthermore, the ability to successfully control the electron energy distribution function (EEDF) and energy level (Ee) characterizing the extracted electron beams allows the measurement of optical excitation cross-section from several reactive plasma effluents, some of which have not been measured before. The distinctiveness of the system with such a measurement capability to real time diagnostics, and its usefulness to measure cross sections of molecular species from plasmas are discussed.
|Advisor:||Goeckner, Matthew J., Overzet, Lawrence J.|
|Commitee:||Hosch, Jimmy, Lee, Jeong B., Voit, Walter E., Walker, Amy V.|
|School:||The University of Texas at Dallas|
|School Location:||United States -- Texas|
|Source:||DAI-B 74/01(E), Dissertation Abstracts International|
|Subjects:||Electrical engineering, Plasma physics|
|Keywords:||Electron beams, Electron energy distribution, Optical emission spectroscopy, Optical excitation, Plasma chemistry, Plasma processing|
Copyright in each Dissertation and Thesis is retained by the author. All Rights Reserved
The supplemental file or files you are about to download were provided to ProQuest by the author as part of a
dissertation or thesis. The supplemental files are provided "AS IS" without warranty. ProQuest is not responsible for the
content, format or impact on the supplemental file(s) on our system. in some cases, the file type may be unknown or
may be a .exe file. We recommend caution as you open such files.
Copyright of the original materials contained in the supplemental file is retained by the author and your access to the
supplemental files is subject to the ProQuest Terms and Conditions of use.
Depending on the size of the file(s) you are downloading, the system may take some time to download them. Please be