Graphene, a one-dimensional array of carbon atoms, is a unique material which has yet to be fully utilized. It is being investigated for its applications in the digital, analog, and high frequency (RF) domains. While it lacks a natural bandgap, rendering it unsuitable for digital circuitry without additional modification of electrical characteristics, graphene is applicable to a wide spectrum of RF applications ranging from communications platforms to flexible electronics. Specifically, its use in building RF field-effect transistors (FETs) can lead to better performance metrics, higher bandwidths, and faster data transmission rates. Graphene FETs (GFETs) are attractive because the graphene channel can be grown over large-area surfaces, and the devices typically exhibit high electron and hole mobilities and high achievable current densities . In order to bridge the gap between device simulation and circuit design, a closed-form large-signal compact model compatible with commercially available circuit simulators is desired. The primary investigation of this study is to develop such a model and to evaluate its accuracy with measured and simulated data.
|Advisor:||Zaghloul, Mona E.|
|Commitee:||Ahmadi, Shahrokh, Ivanov, Tony G., Zaghloul, Mona E.|
|School:||The George Washington University|
|School Location:||United States -- District of Columbia|
|Source:||MAI 51/01M(E), Masters Abstracts International|
|Subjects:||Engineering, Electrical engineering, Nanotechnology|
|Keywords:||Ads, Compact model, Fet, Graphene, Graphene fet, Modeling|
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