Dissertation/Thesis Abstract

A RF Graphene FET Large-Signal Compact Model Compatible with Circuit Simulators
by Trocchia, Scott M., M.S., The George Washington University, 2012, 101; 1514735
Abstract (Summary)

Graphene, a one-dimensional array of carbon atoms, is a unique material which has yet to be fully utilized. It is being investigated for its applications in the digital, analog, and high frequency (RF) domains. While it lacks a natural bandgap, rendering it unsuitable for digital circuitry without additional modification of electrical characteristics, graphene is applicable to a wide spectrum of RF applications ranging from communications platforms to flexible electronics. Specifically, its use in building RF field-effect transistors (FETs) can lead to better performance metrics, higher bandwidths, and faster data transmission rates. Graphene FETs (GFETs) are attractive because the graphene channel can be grown over large-area surfaces, and the devices typically exhibit high electron and hole mobilities and high achievable current densities [1]. In order to bridge the gap between device simulation and circuit design, a closed-form large-signal compact model compatible with commercially available circuit simulators is desired. The primary investigation of this study is to develop such a model and to evaluate its accuracy with measured and simulated data.

Indexing (document details)
Advisor: Zaghloul, Mona E.
Commitee: Ahmadi, Shahrokh, Ivanov, Tony G., Zaghloul, Mona E.
School: The George Washington University
Department: Computer Engineering
School Location: United States -- District of Columbia
Source: MAI 51/01M(E), Masters Abstracts International
Subjects: Engineering, Electrical engineering, Nanotechnology
Keywords: Ads, Compact model, Fet, Graphene, Graphene fet, Modeling
Publication Number: 1514735
ISBN: 978-1-267-47065-2
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